FQP13N10L mosfet equivalent, n-channel mosfet.
* 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A
* Low Gate Charge (Typ. 8.7 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Tested
* 17.
Features
* 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A
* Low Gate Charge (Typ. 8.7 nC)
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